Публикации 1998 - 2001 г.г.

2001 г.

  • G.A. Maximov, D.O. Filatov / True Atomic Resolution in Non-Contact Atomic Force Microscopy in Ultra High Vacuum on Si(111) 7x7 // Phys.Low-Dim.Struct., 3/4. 2001. pp.287-293.
  • B.N. Zvonkov, I.A. Karpovich, N.V. Baidus, D.O. Filatov, and S.V. Morozov / Influence of Bismuth doping of InAs quantum dot layers on the morphology and photoelectronic properties of GaAs/InAs heterostructures grown by Metal-Organic Vapor Phase Epitaxy // Fizika i Tekhnika Poluprovodnikov, 35, №1. 2001. pp.92-97. (Semiconductors, 35, №1. 2001. pp.93-98).
  • I.A. Karpovich, A.P. Gorshkov, S.B. Levichev, S.V. Morozov, B.N. Zvonkov, D.O. Filatov / Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte system // Fizika i Tekhnika Poluprovodnikov, 2001. v.35, №5. pp.564–570.(Semiconductors, v.35, №5. 2001. pp.543–549)
  • I.A. Karpovich, N.V. Baidus, B.N. Zvonkov, D.O. Filatov, S.B. Levichev, A.V. Zdoroveishev, V.A.Perevoshikov / Investigation of the buried InAs/GaAs quantum dots by SPM combined with selective chemical etching // Phys.Low-Dim.Struct., 3/4. 2001. pp.341-348.
  • D.A. Pavlov, A.F. Khokhlov, P.A. Shiljaev, D.V. Shengurov, V.G. Shengurov / Fractality of amorphous, nano-, micro- and polycrystalline silicon films surface // Poverhnost, №8. 2001. pp.107-112.
  • I.A. Chuchmai, A.F. Khokhlov, A.V. Ershov / Structural measurements of amorfous silicon multilayers by Atomic Force Microscopy // Phys.Low-Dim.Struct., 3/4. 2001. pp.47-52.
  • I.A. Chuchmai, A.V. Ershov, A.F. Khokhlov, Yu.A. Syomin / On the quantum dimensional behaviour of the absorbsion spectra in the a-Si/ZrOx nanostructures // Vestnik NNGU, Chast Fizika Tverdogo Tela, Seriya 3. 2001. pp.276-282.
  • G.G. Devyatikh, A.V. Gusev, A.F. Khokhlov, G.A. Maximov, A.A. Ezhevsky, D.V. Guseynov, E.M. Dianov / Electronic paramagnetic resonance in mono-isotopic high-purity silicon – 28 // Doklady RAN, v.376, №1. 2001. pp. 62 – 65.
  • D.I. Tetelbaum, S.A. Trushin, Z.F. Krasil’nik, D.M. Gaponova, A.N.Mikhailov / Luminescence of silicon nanostructured by irradiation with heavy ions // Optical Materials, v.17, №1-2. 2001. pp. 57-59.
  • N.V. Vostokov, S.A. Gusev, Yu.N. Drozdov, Z.F. Krasil’nik, D.N. Lobanov, N. Mesters, M. Miura, L.D. Moldavskaya, A.V. Novikov, J. Pascual, V.V. Postnikov, Y. Shiraki, V.A. Yakhimchuk, N. Usami, M.Ya. Valakh / The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures // Phys.Low-Dim.Sruct., 3/4. 2001. pp.295-302.
  • M.F. Churbanov, V.V. Gerasimenko, L.S. Malygina, S.V. Smetanin, A.I. Suchkov, V.S. Shiryaev, D.O. Filatov, A.V.Kruglov / Formation of Second-Phase Inclusions in Molten As2Se3 via Chemical Transport of Carbon // Neorganicheskie Materialy, v.37, №4. 2001. pp.418-420.
  • V.N. Chuvil’deev, E.S. Smirnova / Temperature of Recrystallization in Metals Inclusive the Small Components of an Impurity // Fizika Metallov i Metallovedenie, v.92, №2, 2001. pp. 1-6. (The Physics of Metalls and Metallography, v.92, №2, 2001. pp.1-6.)
  • G.A. Maximov, O.N. Gorshkov, V.V. Novikov, A.S. Strakhov, D.O. Filatov, S.Yu. Zubkov, D.E. Nikolichev, S. Aggsrwal, R. Ramesh, E. Williams / Ultraviolet- and plasma-enhanced self-assembled growth and SPM characterization of Pd oxide nanotips// Phys.Low-Dim.Struct., 3/4. 2001. p.175.
  • S.R. Shinde, A.S. Ogale, S. Aggarwal, V.N ovikov, E.D. Williams, RRamesh / Self-organized patternformation in the oxidation of supported iron thin films // Physical Review B. 2001. v. 64, 035408.

2000 г.

  • V.F. Drayhlushin, A.Yu. Klimov, V.V. Rogov, A.V. Kruglov / Probes for Scanning Near-field Optical Microscope // Poverhnost, №7. 2000. pp.40-43.
  • O.A. Morozov, S.A. Mineev, O.V. Sotnikiva, Yu.Yu. Gushina / Plotting of the surface deformation function using the topographic data by Scanning Probe Microscopy // Poverhnost, №7. 2000. pp. 96 – 99.
  • I.A. Karpovich, D.O. Filatov, S.V.Morozov, N.V. Baidus, B.N. Zvonkov, Yu.Yu. Gushina / On the relation between the photoelectrical sensitivity and the photoluminescence and the geometrical parameters of the quantum dots in the InAs/GaAs heterostructures // Izvestiya RAN, seriya Fizicheskaya, v.64, №2. 2000. pp. 313.
  • N.V. Baidus, B.N. Zvonkov, D.O. Filatov, Yu.Yu. Gushina, I.A. Karpovich, A.V. Zdoroveishev / Investigation of the process of overgrowth of the InAs nanoclusters in the GaAs/InAs quantum dot heterostructures obtained by the vapor-phase epitaxy // Poverhnost, №7. 2000. pp.71-75.
  • A.F. Khokhlov, I.A. Chuchmai, A.V. Ershov / Absorption features in a-Si/ZrOx nanostructures // Fizika i Tekhnika Poluprovodnikov, v.34, №3. 2000. pp. 349-353 (Semiconductors, v.34, №3. 2000. pp.344-347).
  • A.V. Ershov, I.A. Chuchmai, A.F. Khokhlov, A.I. Mashin, Yu.A. Syomin / Optical absorption in a-Si/ZrOx multilayer nanostructures // Izvestiya Vuzov, seriya Electronika, v.1. 2000. pp.107-109.
  • D.I. Tetelbaum, O.N. Gorshkov, S.A. Trushin , D.G. Revin, D.M. Gaponova, W. Eckstein. / The influence of formation regimes and doping on the luminescence properties of SiO2:Si nanostructured system at ion irradiation // Izvestiya RAN, seriya Fizicheskaya, v.64, №2 (2000): pp.362-365.
  • D.I. Tetelbaum, S.A. Trushin, A.V.Pitirimov / Computer modeling of the formation of amorphous-crystalline two-phase nanosystem at ion irradiation of silicon // Izvestiya RAN, seriya Fizicheskaya, 2000. v.64, №11. pp.2168-2169.
  • A.V. Pitirimov, E.A. Pitirimova, D.I. Tetelbaum, V.G. Shengurov, A.F. Khokhlov / Electron-microscopic diagnostics of amorphous-crystalline nanosystem, formed by bombardment of silicon by Kr+ ions // Poverhnost, 2000. v.15. pp.701-704.
  • D.I. Tetelbaum, S.A. Trushin , D.G. Revin, D.M. Gaponova , A.I. Golovanov / The photoluminescence of а-Si system with с-Si nanoinclusions, formed by a method of an irradiation of monocrystalline silicon by heavy ions // Izvestiya RAN, seriya Fizicheskaya, 2000. v.65, №2. pp.292-294.
  • V.F. Drayhlushin, A.Yu. Klimov, V.V. Rogov, D.O. Filatov, A.V.Kruglov / Investigation of the spatial structure of emission of the semiconductor IR-lasers in the near-field to far-field transition region with subwavelength resolution // Poverhnost, 2000. №11. pp.64-67.
  • S.A. Yegorov, V.Yu. Kudryavtsev, G.A. Maximov, O.D. Poleshuk, D.O. Filatov, A.F. Khokhlov / Basic research and higher education – N.Novgorod: UNN Publishing, 2000. 310 P.
  • B.N. Zvonkov, I.A. Karpovich, N.V. Baidus, D.O. Filatov, S.V. Morozov, Yu.Yu. Gushina / Surfactant effect of bismuth in the MOVPE growth of the InAs quantum dots on GaAs // Nanotechnology, 2000. v.11. p.221-226.
  • В.Ф. Дряхлушин, А.Ю. Климов, В.В. Рогов, А.В. Круглов / Зонды для сканирующего ближнепольного оптического микроскопа // Поверхность. 2000, №7.
  • В.Ф. Дряхлушин, А.Ю. Климов, В.В. Рогов, Д.О. Филатов, А.В. Круглов / Исследование пространственной структуры излучения полупроводниковых лазеров в переходной области от ближнего поля к дальнему с субволновым разрешением // Поверхность. 2000, №11.
  • И.А. Карпович, Д.О. Филатов, С.В. Морозов, Н.В. Байдусь, Б.Н. Звонков, Ю.Ю. Гущина. О связи спектров фотоэлектрической чувствительности и фотолюминесценции с геометрическими параметрами слоя квантовых точек в гетероструктурах InAs/GaAs. Известия АН, сер. Физическая, 2000. т.63, №2, с. 331-337.
  • Тетельбаум Д.И., Трушин С.А. Компьютерное моделирование формирования аморфно-кристаллической двухфазной наносистемы при ионном облучении кремния. Изв. РАН. Сер. физ. 2000, Т.64, №10.
  • Z.F.Krasil'nik, N.V.Vostokov, S.A.Gusev, I.V.Dolgov, Yu.N.Drozdov, D.N.Lobanov, L.D.Moldavskaya, A.V.Novikov, V.V.Postnikov, D.O.Filatov / The Elastic strain and compositionof self-assembled GeSi islands on Si (001) // Thin Solid Films. 2000. 367. P. 171-175.
  • Н.В. Востоков, С.А. Гусев, И.В. Долгов, Ю.Н. Дроздов, З.Ф. Красильник, Д.Н. Лобанов, Л.Д. Молдавская, А.В. Новиков, В.В. Постников, Д.О. Филатов / Упругие напряжения и состав самоорганизующихся наноостровков GeSi на Si (001) // ФТП, 2000. 34, №1, 8.
  • N.V. Vostokov, I.V. Dolgov, Yu.N. Drozdov, Z.F. Krasil'nik, D.N. Lobanov, L.D. Moldavskaya, A.V. Novikov, V.V. Postnikov, D.O. Filatov / Transition from "dome" to "pyramid" shape of self-assembled GeSi islands // J.Cryst.Growth, 2000. 209, № 2-3 302.
  • Z.F. Krasil'nik, N.V. Vostokov, S.A. Gusev, I.V. Dolgov, Yu.N. Drozdov, D.N. Lobanov, L.D. Moldavskaya, A.V. Novikov, V.V. Postnikov, D.O. Filatov / The Elastic strain and composition of self-assembled GeSi islands on Si (001) // Thin Solid Films, 2000. 367 171.
  • Н.В. Востоков, И.В. Долгов, Ю.Н. Дроздов, З.Ф. Красильник, Д.Н. Лобанов, Л.Д. Молдавская, А.В. Новиков, В.В. Постников, Д.О. Филатов / Однородные наноостровки Ge на Si (001) // Известия РАН: Серия физическая, 2000. 63, №2, 302.
  • I.A. Karpovich, B.N. Zvonkov, D.O. Filatov, S.B. Levichev , N.B. Baidus, S.M. Nekorkin / Investigation of morphology and photoelectronic properties of GaAs/InGaAs heterostructures with combined quantum well and self-assembled quantum dot layers // Poverhnost, 2000. №11, pp.27-31.
  • D.I. Tetelbaum, O.N. Gorshkov, S.A. Trushin, D.G. Revin, D.M. aponova, W. Eckstein / The enhancement of luminescence in ion implanted Si quantum dots in SiO2 matrix by means of dose alignment and doping // Nanotechnology, 2000. v.11. pp.295-297.
  • D.I. Tetelbaum, S.A. Trushin, V.A. Burdov, A.I. Golovanov, D.G. Revin, D.M. Gaponova / The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions // Nucl.Instr.Meth., B., 2000. v.174/1-2. pp.123-129.
  • V.F. Dryakhlushin, A.Yu. Klimov, V.V. Rogov, V.I. Shashkin, L.V. Sukhodoev, D.G. Volgunov, V.Vostokov / Development of contact scanning probe lithography methods for the fabrication of lateral nano-dimensional elements // Nanotechnology, 2000. v.11. pp.188–191.
  • N.V. Vostokov, I.V. Dolgov, Yu.N. Drozdov, Z.F. Krasil'nik, D.N. Lobanov, L.D. Moldavskaya, A.V. Novikov, V.V.P ostnikov, D.O. Filatov / Transition from "dome" to "pyramid" shape of self-assembled GeSi islands // J.Cryst.Growth, 2000. v.209, № 2-3 pp.302-305.
  • Z.F. Krasil'nik, N.V. Vostokov, S.A. Gusev, I.V. Dolgov, Yu.N. Drozdov, D.N. Lobano, L.D. Moldavskaya, A.V. Novikov, V.V. Postnikov, D.O. Filatov / The Elastic strain and compositionof self-assembled GeSi islands on Si (001) // Thin Solid Films, 2000. №367 p.171.
  • N.V. Vostokov, S.A. Gusev, I.V. Dolgov, Yu.N. Drozdov, Z.F. Krasil'nik, D. Lobanov, L.D. Moldavskaya, A.V. Novikov, V.V. Postnikov, D.O. Filatov / Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001) // Fizika i Tekhnika Poluprovodnikov, 2000. 34, №1, 8. (Semiconductors. 2000. v. 34, №1, pp. 6-10).
  • N.V. Vostokov, I.V. Dolgov, Yu.N. Drozdov, Z.F. Krasil'nik, D. N.Lobanov, L.D. Moldavskaya, A.V. Novikov, V.V. Postnikov, D.O. Filatov / Uniform Ge nanoislands on Si(001) // Izvestia RAN Seriya Fizicheskaya, 2000. v. 63, №2, pp.302-307.

1999 г.

  • A.I. Mashin, A.F. Khokhlov, A.G. Razuvaev, S.K. Ignatov, A.A. Shchepalov / Role of impurities in the formation of silicyne (long-chain silicon): theory and experiment // Fizika I Tekhnika Poluprovodnikov, 1999. v.33, №10, pp.1253-1259. (Semiconductors, 1999, v.33, №10, pp.1139-1144).
  • A.I. Mashin and A.F. Khokhlov / Conductivity and absorption edge of amorphous silicyne // Fizika i Tekhnika Poluprovodnikov, 1999. v.33, №11. pp. 1384-1387. (Semiconductors, 1999. v.33, №11. pp.1251-125.)
  • З.Ф. Красильник, А.В. Новиков, В.В. Постников, Д.О. Филатов, А.В. Круглов / Исследование самоорганизующихся островков Ge на Si (100) с помощью атомно-силового микроскопа // Известия АН: Серия физическая, 1999. т.63(2), стр. 287-289.
  • Z.F. Krasil’nik, A.V. Kruglov, A.V. Novikov, V.V. Postnikov, D.O. Filatov / Investigation of self-organized Ge nanoislands on Si(100) by Atomic Force Microscopy // Izvestiya RAN, Seriya Fizicheskaya, 1999, v.63, №2, pp.287-289.
  • N.B. Zvonkov, S.A. Akhlestina, A.V. Ershov, B.N. Zvonkov, G.A. Maximov, E.A. Uskova / Semiconductor lasers with broad tunnel-coupling waveguids, emitting at a wavelength of 980 nm // Kvantovaya Elektronika, 1999, v.29, pp.217-218.
  • A.I. Mashin, A.F. Khokhlov / Multiple bonds in hydrogen-free amorphous silicon // Fizika i Tekhnika Poluprovodnikov, 1999, v.33, №8, pp.1001-1004. (Semiconductors, 1999, v.33, №8, pp. 911-914.)
  • V.G. Shengurov, A.V. Shabanov, V.N. Shabanov / Delta-doped silicon layers grown by molecular-beam epitaxy with irradiation of growth surface by low-energy ions // Neorganicheskie Materialy, 1999, v.35, №5, pp.519-522.
  • V.G. Shengurov, S.P. Svetlov, D.A. Pavlov, A.F. Khokhlov, Z.F. Krasil’nik, R. Craius, H. Wagner / Light-emitting erbium-doped silicon layers grown by sublimation MBE with applied potential // Izvestia RAN, Seriya Fizicheskaya, 1999, v.63, №2, pp.404-410.
  • I.А. Chuchmai, А.F. Khokhlov, A.I. Mashin, А.V. Ershov, S.S. Andreev / Particularities of electron transport in a-Si/ZrOx multilayer nanostructures // Izvestiya Vuzov, Seriya Electronika, 1999, v.5, pp.15-20.
  • A.V. Ershov, A.I. Mashin, A.F. Khokhlov / Ion-implantation doping of amorphous Si1-xGex films // Izvestiya RAN, Seriya Fizicheskaya, 1999, v.63, pp.278-281.
  • D.I. Tetelbaum, O.N. Gorshkov, S.A. Trushin, M.V. Stepikhova / The enhancement of photoluminescence of nanostructured system “silicon in SiO2” by ion doping by phosphorus // Izvestia RAN, Seriya Fizicheskaya, 1999, v.63, №2, p.348-351.
  • O.N. Gorshkov, V.A. Novikov, A.P. Kasatkin / The formation of nanosized inclusions in stabilized zirconia surface layer under ion irradiation // Neorganicheskie Materialy, 1999, v.35, №5, p.604-610.
  • O.N. Gorshkov, V.A. Novikov, A.P. Kasatkin / Influence of an external electric field on the recovery of stabilized zirconium dioxide under helium ion bombardment // Pis'ma v Zhurnal Tekhnicheskoi Fiziki, 1999, v.25, №14, p.72-75. (Technical Physics Letters, 1999, v.25, №7, p.580-581.)
  • M.Yu. Gryaznov, A.N. Sysoev, V.N. Chuvil’deev / Internal Friction in Microcrystalline Metals.Part III.Dislocations Model of Internal Friction // Materialovedenie, 1999, №8, pp.22-26.
  • E.S. Smirnova, V.N. Chuvil’deev / Effect of Small Impurity Concentrations on the Diffusive Properties of Grain Boundaries // Fizika Metallov i Metallovedenie. 1999, v.88, №1, pp.74-79. (The Physics of Metals and Mettalography. 1999, v.88, №1, pp.67-72).

1998 г.

  • B.А. Аndreev, V.G. Golubev, G.I. Kropotov, G.A. Maximov, V.B. Shmagin / Calculation of absorption coefficient and impurities in semiconductors using photoconductivity spectra // Zhurnal Analiticheskoi Khimii, 1998, v. 53, №11, p. 1204.
  • I.A. Karpovich, A.V. Anshon, D.O. Filatov / Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma // Fizika i Tekhnika Poluprovodnikov, 1998, v. 32, №9, pp. 1089-1094. (Semiconductors, 1998, v. 32, №9. pp. 975-979).
  • N.B. Zvonkov, B.N. Zvonkov, A.V. Ershov, E.A. Uskova, G.A. Maximov / Semiconductor lasers emitting at the 0.98 mkm wavelength with radiation coupling-out through the substrate // Kvantovaya Elektronika, 1998, v. 28, pp.605-607. (Quantum Electronics, 1998, v. 28(7), pp.605-607.)
  • D.V. Shengurov, D.A. Pavlov, A.V. Shabanov, V.G. Shengurov, A.F. Khokhlov / Unmonotonous dependence of polycrystalline silicon films resistance from temperature of growth // Fizika i Tekhnika Poluprovodnikov, 1998, v. 32, №5, pp. 627-630. (Semiconductors, 1998, v. 32, №5, pp.562-564).
  • D.V. Shengurov, D.A. Pavlov, V.G. Shengurov, A.F. Khokhlov / Properties of polycrystalline silicon films, grown up by silicon sublimation with the applying of negative substrate bias // Izvestiya RAN, seria Physicheskaya, 1998, v. 34, №9, 1128-1131.
  • I.А. Chuchmai, А.F. Khokhlov, А.V. Ershov / Optical and electrical properties of a-Si/ZrOx multilayer structures with nanometer periodicity // Vestnik NNGU, Seriya “Fizika Tverdogo Tela”, Seriya 1, 1998, pp.148-159.
  • A.I. Mashin, A.V. Ershov, D.A. Khokhlov / Effect of deposition and annealing conditions on the optical properties of amorphous silicon // Fizika i Tekhnika Poluprovodnikov, 1998, v.32, №7, pp.879-882. (Semiconductors, 1998, v.32, №7, pp.782-784).
  • A.V. Ershov, A.I. Mashin, A.F. Khokhlov / Doping and impurity compensation by ion implantation in a-SiGe films // Fizika i Tekhnika Poluprovodnikov, 1998, v.32, №10, pp.1260-1263. (Semiconductors, 1998, v.32, №10, pp.1125-1127).